다결정 실리콘 웨이퍼 직접제조에 대한 공정변수 영향Effect of Processing Parameters on Direct Fabrication of Polycrystalline Silicon Wafer
- Other Titles
- Effect of Processing Parameters on Direct Fabrication of Polycrystalline Silicon Wafer
- Authors
- 위성민; 이진석; 장보윤; 김준수; 안영수; 윤우영
- Issue Date
- 2013
- Publisher
- 한국주조공학회
- Keywords
- Solar cell; Silicon; Wafer; Solidification; Interface
- Citation
- 한국주조공학회지, v.33, no.4, pp.157 - 161
- Indexed
- KCI
- Journal Title
- 한국주조공학회지
- Volume
- 33
- Number
- 4
- Start Page
- 157
- End Page
- 161
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/105088
- DOI
- 10.7777/jkfs.2013.33.4.161
- ISSN
- 1598-706X
- Abstract
- A ribbon-type polycrystalline silicon wafer was directly fabricated from liquid silicon via a novel technique for both a fast growth rate and large grain size by exploiting gas pressure. Effects of processing parameters such as moving speed of a dummy bar and the length of the solidification zone on continuous casting of the silicon wafer were investigated. Silicon melt extruded from the growth region in the case of a solidification zone with a length of 1cm due to incomplete solidification. In case of a solidification zone wieh a length of 2 cm, on the other hand, continuous casting of the wafer was impossible due to the volume expansion of silicon derived from the liquid-solid transformation in solidification zone. Consequently, the optimal length of the solidification zone was 1.5 cm for maintaining the position of the solid-liquid interface in the solidification zone. The silicon wafer could be continuously casted when the moving speed of the dummy bar was 6 cm/min, but liquid silicon extruded from the growth region without solidification when the moving speed of the dummy bar was ≥ 9 cm/min. This was due to a shift of the position of the solid-liquid interface from the solidification zone to the moving area. The present study reports experimental findings on a new direct growth system for obtaining silicon wafers with both high quality and productivity, as a candidate for an alternate route for the fabrication of ribbon-type silicon wafers.
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