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Photoresponsive ambipolar transport characteristics of organic thin film transistors using soluble HB-ant-THT and PCBM composites

Authors
Yang, Seung HoCho, Mi YeonJo, Seong GiJung, Jin SunJung, Ki HwaBae, Suk YoungChoi, Dong HoonKim, SangsigJoo, Jinsoo
Issue Date
Mar-2012
Publisher
ELSEVIER SCIENCE SA
Keywords
Photovoltaic effect; HB-ant-THT; PCBM; Ambipolar transistor; Organic thin film transistor; Photoresponse electrical characteristics
Citation
SYNTHETIC METALS, v.162, no.3-4, pp.332 - 336
Indexed
SCIE
SCOPUS
Journal Title
SYNTHETIC METALS
Volume
162
Number
3-4
Start Page
332
End Page
336
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/105395
DOI
10.1016/j.synthmet.2011.12.014
ISSN
0379-6779
Abstract
We report on the photoresponsive ambipolar transport characteristics of organic thin film transistors (OTFTs) with two different types of electrodes using composites of soluble p-type x-shaped small molecules, 5,5'-(9,10-bis((4-hexylphenyl)ethynyl) anthracene-2,6-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene) (NB-ant-TNT) and n-type molecules, (6.6)-phenyl-C-61-butyric acid methyl ester (PCBM). Composites of HB-ant-THT and PCBM with varying concentration ratios were spin-coated as an active layer and thermal annealing was performed to increase the crystallinity of the active layer. The ambipolar transport characteristics were observed by applying the gate bias in OTFTs with a Au-Au electrode. With increasing the concentration of n-type PCBM, the hole mobility decreased while the electron mobility increased. We observed that the photocurrent in the OTFTs increased upon light irradiation. Ambipolar OTFTs prepared with Au-Al electrodes showed weak photovoltaic effect, and the power conversion efficiency of the devices increased with increasing the PCBM concentration. (C) 2011 Elsevier B.V. All rights reserved.
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