Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method
- Authors
- Kim, Kyoungwon; Kim, Sangsig; Lee, Sang Yeol
- Issue Date
- Mar-2012
- Publisher
- ELSEVIER
- Keywords
- ZnO; Excimer laser; Laser annealing
- Citation
- CURRENT APPLIED PHYSICS, v.12, no.2, pp.585 - 588
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 12
- Number
- 2
- Start Page
- 585
- End Page
- 588
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/105436
- DOI
- 10.1016/j.cap.2011.09.006
- ISSN
- 1567-1739
- Abstract
- Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH3COO)(2)], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (lambda = 248, KrF) source with energy density of 50 mJ/cm(2) for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature. (C) 2011 Elsevier B.V. All rights reserved.
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