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Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application

Authors
Kim, TaeYoungKirn, HyeongkeunKwon, Soon WooKim, YenaPark, Won KyuYoon, Dae HoJang, A-RangShin, Hyeon SukSuh, Kwang S.Yang, Woo Seok
Issue Date
Feb-2012
Publisher
AMER CHEMICAL SOC
Keywords
Graphene; self-assembly; patterning; large-area; flexible electronics; field effect transistor
Citation
NANO LETTERS, v.12, no.2, pp.743 - 748
Indexed
SCIE
SCOPUS
Journal Title
NANO LETTERS
Volume
12
Number
2
Start Page
743
End Page
748
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/106164
DOI
10.1021/nl203691d
ISSN
1530-6984
Abstract
We report on a method for the large-scale production of graphene micropatterns by a self-assembly mediated process. The evaporation-induced self-assembly technique was engineered to produce highly ordered graphene patterns on flexible substrates in a simplified and scalable manner. The crossed stripe graphene patterns have been produced over a large area with regions consisting of single- and two-layer graphene. Based on these graphene patterns, flexible graphene-based field effect transistors have been fabricated with an ion-gel gate dielectric, which operates at low voltages of < 2 V with a hole and electron mobility of 214 and 106 cm(2)/V.s, respectively. The self-assembly approach described here may pave the way for the nonlithographic production of graphene patterns, which is scalable to large areas and compatible with roll-to-roll system.
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