Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application
- Authors
- Kim, TaeYoung; Kirn, Hyeongkeun; Kwon, Soon Woo; Kim, Yena; Park, Won Kyu; Yoon, Dae Ho; Jang, A-Rang; Shin, Hyeon Suk; Suh, Kwang S.; Yang, Woo Seok
- Issue Date
- 2월-2012
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Graphene; self-assembly; patterning; large-area; flexible electronics; field effect transistor
- Citation
- NANO LETTERS, v.12, no.2, pp.743 - 748
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO LETTERS
- Volume
- 12
- Number
- 2
- Start Page
- 743
- End Page
- 748
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/106164
- DOI
- 10.1021/nl203691d
- ISSN
- 1530-6984
- Abstract
- We report on a method for the large-scale production of graphene micropatterns by a self-assembly mediated process. The evaporation-induced self-assembly technique was engineered to produce highly ordered graphene patterns on flexible substrates in a simplified and scalable manner. The crossed stripe graphene patterns have been produced over a large area with regions consisting of single- and two-layer graphene. Based on these graphene patterns, flexible graphene-based field effect transistors have been fabricated with an ion-gel gate dielectric, which operates at low voltages of < 2 V with a hole and electron mobility of 214 and 106 cm(2)/V.s, respectively. The self-assembly approach described here may pave the way for the nonlithographic production of graphene patterns, which is scalable to large areas and compatible with roll-to-roll system.
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