Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, Taeho | - |
dc.contributor.author | Jung, Ji-Chul | - |
dc.contributor.author | Han, Yong | - |
dc.contributor.author | Jeon, Youngin | - |
dc.contributor.author | Koo, Sang-Mo | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-06T12:52:28Z | - |
dc.date.available | 2021-09-06T12:52:28Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2012-12 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/106882 | - |
dc.description.abstract | The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped p-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MEMORY | - |
dc.title | Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1109/TED.2012.2220778 | - |
dc.identifier.scopusid | 2-s2.0-84870294204 | - |
dc.identifier.wosid | 000311680400019 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.12, pp.3288 - 3291 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 59 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 3288 | - |
dc.citation.endPage | 3291 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | Flexible electronics | - |
dc.subject.keywordAuthor | logic gate | - |
dc.subject.keywordAuthor | memristive switches | - |
dc.subject.keywordAuthor | Si nanowire (NW) | - |
dc.subject.keywordAuthor | top-down approach | - |
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