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Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches

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dc.contributor.authorMoon, Taeho-
dc.contributor.authorJung, Ji-Chul-
dc.contributor.authorHan, Yong-
dc.contributor.authorJeon, Youngin-
dc.contributor.authorKoo, Sang-Mo-
dc.contributor.authorKim, Sangsig-
dc.date.accessioned2021-09-06T12:52:28Z-
dc.date.available2021-09-06T12:52:28Z-
dc.date.created2021-06-14-
dc.date.issued2012-12-
dc.identifier.issn0018-9383-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/106882-
dc.description.abstractThe flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped p-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectMEMORY-
dc.titleFlexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Sangsig-
dc.identifier.doi10.1109/TED.2012.2220778-
dc.identifier.scopusid2-s2.0-84870294204-
dc.identifier.wosid000311680400019-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.12, pp.3288 - 3291-
dc.relation.isPartOfIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.citation.titleIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.citation.volume59-
dc.citation.number12-
dc.citation.startPage3288-
dc.citation.endPage3291-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordAuthorFlexible electronics-
dc.subject.keywordAuthorlogic gate-
dc.subject.keywordAuthormemristive switches-
dc.subject.keywordAuthorSi nanowire (NW)-
dc.subject.keywordAuthortop-down approach-
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