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Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches

Authors
Moon, TaehoJung, Ji-ChulHan, YongJeon, YounginKoo, Sang-MoKim, Sangsig
Issue Date
12월-2012
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Flexible electronics; logic gate; memristive switches; Si nanowire (NW); top-down approach
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.12, pp.3288 - 3291
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
59
Number
12
Start Page
3288
End Page
3291
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/106882
DOI
10.1109/TED.2012.2220778
ISSN
0018-9383
Abstract
The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped p-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.
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공과대학 (전기전자공학부)
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