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UV ozone treatment for improving contact resistance on graphene

Authors
Chen, Chung WeiRen, FanChi, Gou-ChungHung, Sheng-ChunHuang, Y. P.Kim, JihyunKravchenko, Ivan I.Pearton, Stephen J.
Issue Date
11월-2012
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.6
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume
30
Number
6
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/106996
DOI
10.1116/1.4754566
ISSN
1071-1023
Abstract
Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 x 10(-6) Omega-cm(2)) compared to untreated surfaces (4 x 10(-3) Omega-cm(2)). Subsequent annealing at 300 degrees C lowers the minimum value achieved to 7 x 10(-7) Omega-cm(2). Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4754566]
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