Effects of annealing on ion-implanted Si for interdigitated back contact solar cell
- Authors
- Kang, Min Gu; Lee, Jong-Han; Boo, Hyunpil; Tark, Sung Ju; Hwang, Hae Chul; Hwang, Wook Jung; Kang, Hee Oh; Kim, Donghwan
- Issue Date
- 11월-2012
- Publisher
- ELSEVIER
- Keywords
- Implantation; Annealing; Si solar cell; Interdigitated back contact
- Citation
- CURRENT APPLIED PHYSICS, v.12, no.6, pp.1615 - 1618
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 12
- Number
- 6
- Start Page
- 1615
- End Page
- 1618
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107155
- DOI
- 10.1016/j.cap.2012.05.035
- ISSN
- 1567-1739
- Abstract
- Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 degrees C. P-implanted samples annealed at 950 degrees C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 degrees C. The implied V-oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 degrees C for B of the emitter and 950 degrees C for P of the front and back surface fields. The IBC cell had V-oc of 618 mV, J(sc) of 35.1 mA/cm(2), FF of 78.8%, and the efficiency of 17.1% without surface texturing. (C) 2012 Elsevier B.V. All rights reserved.
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