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Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hee-Dong | - |
| dc.contributor.author | An, Ho-Myoung | - |
| dc.contributor.author | Kim, Tae Geun | - |
| dc.date.accessioned | 2021-09-06T14:44:12Z | - |
| dc.date.available | 2021-09-06T14:44:12Z | - |
| dc.date.created | 2021-06-15 | - |
| dc.date.issued | 2012-10 | - |
| dc.identifier.issn | 0167-9317 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107243 | - |
| dc.description.abstract | In this paper, the resistive-switching behavior of Si3N4 films using nitride-related traps in Ti/Si3N4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about +/- 2.5 V. Compared to Au/Si3N4/Ti memory cells, the set and reset current of Ti/Si3N4/Ti memory cells was decreased from 5 mu A and 1.5 mA to 40 nA and 1 mu A, respectively, at V-read = 0.1 V. In addition, Ti/Si3N4/Ti memory cells showed improved endurance characteristics over 2.7 x 10(3) cycles. (C) 2012 Elsevier B.V. All rights reserved. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.title | Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
| dc.identifier.doi | 10.1016/j.mee.2012.07.052 | - |
| dc.identifier.wosid | 000309497200077 | - |
| dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.98, pp.351 - 354 | - |
| dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
| dc.citation.title | MICROELECTRONIC ENGINEERING | - |
| dc.citation.volume | 98 | - |
| dc.citation.startPage | 351 | - |
| dc.citation.endPage | 354 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Optics | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | Resistive switching memory | - |
| dc.subject.keywordAuthor | Si3N4 | - |
| dc.subject.keywordAuthor | Space charge limited current | - |
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)