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Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications

Authors
Kim, Hee-DongAn, Ho-MyoungKim, Tae Geun
Issue Date
10월-2012
Publisher
ELSEVIER SCIENCE BV
Keywords
Resistive switching memory; Si3N4; Space charge limited current
Citation
MICROELECTRONIC ENGINEERING, v.98, pp.351 - 354
Indexed
SCIE
SCOPUS
Journal Title
MICROELECTRONIC ENGINEERING
Volume
98
Start Page
351
End Page
354
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/107243
DOI
10.1016/j.mee.2012.07.052
ISSN
0167-9317
Abstract
In this paper, the resistive-switching behavior of Si3N4 films using nitride-related traps in Ti/Si3N4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about +/- 2.5 V. Compared to Au/Si3N4/Ti memory cells, the set and reset current of Ti/Si3N4/Ti memory cells was decreased from 5 mu A and 1.5 mA to 40 nA and 1 mu A, respectively, at V-read = 0.1 V. In addition, Ti/Si3N4/Ti memory cells showed improved endurance characteristics over 2.7 x 10(3) cycles. (C) 2012 Elsevier B.V. All rights reserved.
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공과대학 (전기전자공학부)
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