Silicon-based metallic micro grid for electron field emission
- Authors
- Kim, Jaehong; Jeon, Seok-Gy; Kim, Jung-Il; Kim, Geun-Ju; Heo, Duchang; Shin, Dong Hoon; Sun, Yuning; Lee, Cheol Jin
- Issue Date
- 10월-2012
- Publisher
- IOP PUBLISHING LTD
- Citation
- JOURNAL OF MICROMECHANICS AND MICROENGINEERING, v.22, no.10
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MICROMECHANICS AND MICROENGINEERING
- Volume
- 22
- Number
- 10
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107256
- DOI
- 10.1088/0960-1317/22/10/105009
- ISSN
- 0960-1317
- Abstract
- A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 x 80 mu m(2) and a thickness of 10 mu m is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 degrees C are presented.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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