Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl-2/Ar Inductively Coupled Plasma
DC Field | Value | Language |
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dc.contributor.author | Kim, Daehee | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Jang, Hanbyeol | - |
dc.contributor.author | Kang, Sungchil | - |
dc.contributor.author | Yun, Sun Jin | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-06T14:47:54Z | - |
dc.date.available | 2021-09-06T14:47:54Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107264 | - |
dc.description.abstract | The TiO2 etching characteristics and mechanism in HBr/Cl-2/Ar inductively coupled plasma (with a fixed bias power of 200 W) were investigated. It was found that the TiO2 etching rate in Cl-2/Ar plasma is about 8 times faster than that in HBr/Ar plasma. In both HBr-rich (60% HBr + 20% Cl-2 + 20% Ar) and Cl-2-rich (20% HBr + 60% Cl-2 + 20% Ar) plasmas, an increase in gas pressure (4-10 mTorr) results in a non-monotonic increase in TiO2 etching rate, while the variation of input power (500-800 W) causes a monotonic acceleration of the etching process. Plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling provided data on plasma parameters, steady-state densities, and fluxes of active species on the etched surface. The model-based analysis of the TiO2 etching kinetics shows a transitional regime of ion-assisted chemical reaction with domination of a chemical etching pathway. (C) 2012 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | MODEL-BASED ANALYSIS | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | PARAMETERS | - |
dc.subject | KINETICS | - |
dc.subject | HE | - |
dc.title | Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl-2/Ar Inductively Coupled Plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1143/JJAP.51.106201 | - |
dc.identifier.scopusid | 2-s2.0-84867828146 | - |
dc.identifier.wosid | 000310705700050 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.10 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 51 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MODEL-BASED ANALYSIS | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | HE | - |
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