Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl-2/Ar Inductively Coupled Plasma
- Authors
- Kim, Daehee; Efremov, Alexander; Jang, Hanbyeol; Kang, Sungchil; Yun, Sun Jin; Kwon, Kwang-Ho
- Issue Date
- 10월-2012
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.10
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 51
- Number
- 10
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107264
- DOI
- 10.1143/JJAP.51.106201
- ISSN
- 0021-4922
- Abstract
- The TiO2 etching characteristics and mechanism in HBr/Cl-2/Ar inductively coupled plasma (with a fixed bias power of 200 W) were investigated. It was found that the TiO2 etching rate in Cl-2/Ar plasma is about 8 times faster than that in HBr/Ar plasma. In both HBr-rich (60% HBr + 20% Cl-2 + 20% Ar) and Cl-2-rich (20% HBr + 60% Cl-2 + 20% Ar) plasmas, an increase in gas pressure (4-10 mTorr) results in a non-monotonic increase in TiO2 etching rate, while the variation of input power (500-800 W) causes a monotonic acceleration of the etching process. Plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling provided data on plasma parameters, steady-state densities, and fluxes of active species on the etched surface. The model-based analysis of the TiO2 etching kinetics shows a transitional regime of ion-assisted chemical reaction with domination of a chemical etching pathway. (C) 2012 The Japan Society of Applied Physics
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