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Structural and electrical properties of high-quality 0.41 mu m-thick InSb films grown on GaAs (100) substrate with InxAl1-xSb continuously graded buffer
- Issue Date
- 10월-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Semiconductors; Thin films; Epitaxial growth; Defects; Electrical properties
- Citation
- MATERIALS RESEARCH BULLETIN, v.47, no.10, pp.2927 - 2930
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 47
- Number
- 10
- Start Page
- 2927
- End Page
- 2930
- ISSN
- 0025-5408
- Abstract
- High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 mu m-thick InSb was 46,300 cm(2)/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb. Crown Copyright (C) 2012 Published by Elsevier Ltd. All rights reserved.
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