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Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Seo, Yujeong | - |
| dc.contributor.author | Song, Minyeong | - |
| dc.contributor.author | An, Ho-Myoung | - |
| dc.contributor.author | Kim, Hee-Dong | - |
| dc.contributor.author | Kim, Tae Geun | - |
| dc.contributor.author | Sung, Yun-Mo | - |
| dc.contributor.author | Kim, Yeon Soo | - |
| dc.date.accessioned | 2021-09-06T14:59:27Z | - |
| dc.date.available | 2021-09-06T14:59:27Z | - |
| dc.date.created | 2021-06-15 | - |
| dc.date.issued | 2012-10 | - |
| dc.identifier.issn | 0167-9317 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107333 | - |
| dc.description.abstract | The electrical properties of Cr-SrTiO3 films deposited on p-Si(100) substrates are investigated for application to a new type of charge-trap flash memory, named ReCTF (ReRAM + CTF). The Cr-SrTiO3 film used as a switch in a ReCTF device has a complete cubic perovskite structure with a (200) crystallographic orientation. By means of current-voltage (I-V) and capacitance-voltage (C-V) analyses, we found that it exhibited electric-field-induced threshold switching characteristics and there were no trapping effects. In this study, we investigated how the retention characteristics of the ReCTF device can be improved without any special processes by applying an optimized Cr-SrTiO3 film. (C) 2012 Elsevier B.V. All rights reserved. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER | - |
| dc.subject | METAL-INSULATOR-TRANSITION | - |
| dc.subject | THIN-FILMS | - |
| dc.subject | OPTICAL-PROPERTIES | - |
| dc.subject | MEMORY | - |
| dc.subject | TRAP | - |
| dc.title | Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
| dc.contributor.affiliatedAuthor | Sung, Yun-Mo | - |
| dc.identifier.doi | 10.1016/j.mee.2012.07.082 | - |
| dc.identifier.wosid | 000309497200070 | - |
| dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.98, pp.321 - 324 | - |
| dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
| dc.citation.title | MICROELECTRONIC ENGINEERING | - |
| dc.citation.volume | 98 | - |
| dc.citation.startPage | 321 | - |
| dc.citation.endPage | 324 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Optics | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
| dc.subject.keywordPlus | THIN-FILMS | - |
| dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
| dc.subject.keywordPlus | MEMORY | - |
| dc.subject.keywordPlus | TRAP | - |
| dc.subject.keywordAuthor | ReCTF | - |
| dc.subject.keywordAuthor | CTF | - |
| dc.subject.keywordAuthor | ReRAM | - |
| dc.subject.keywordAuthor | C-V | - |
| dc.subject.keywordAuthor | I-V | - |
| dc.subject.keywordAuthor | NVMs | - |
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