Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices
- Authors
- Seo, Yujeong; Song, Minyeong; An, Ho-Myoung; Kim, Hee-Dong; Kim, Tae Geun; Sung, Yun-Mo; Kim, Yeon Soo
- Issue Date
- 10월-2012
- Publisher
- ELSEVIER
- Keywords
- ReCTF; CTF; ReRAM; C-V; I-V; NVMs
- Citation
- MICROELECTRONIC ENGINEERING, v.98, pp.321 - 324
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 98
- Start Page
- 321
- End Page
- 324
- ISSN
- 0167-9317
- Abstract
- The electrical properties of Cr-SrTiO3 films deposited on p-Si(100) substrates are investigated for application to a new type of charge-trap flash memory, named ReCTF (ReRAM + CTF). The Cr-SrTiO3 film used as a switch in a ReCTF device has a complete cubic perovskite structure with a (200) crystallographic orientation. By means of current-voltage (I-V) and capacitance-voltage (C-V) analyses, we found that it exhibited electric-field-induced threshold switching characteristics and there were no trapping effects. In this study, we investigated how the retention characteristics of the ReCTF device can be improved without any special processes by applying an optimized Cr-SrTiO3 film. (C) 2012 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.