Temperature-gradient annealing of CdZnTe under Te overpressure
- Authors
- Kim, K. H.; Suh, J.; Bolotnikov, A. E.; Fochuk, P. M.; Kopach, O. V.; Camarda, G. S.; Cui, Y.; Hossain, A.; Yang, G.; Hong, J.; James, R. B.
- Issue Date
- 1-9월-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- X-ray topography; Defects; Bridgman technique; Cadmium compounds; Semiconducting II-VI materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.354, no.1, pp.62 - 66
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 354
- Number
- 1
- Start Page
- 62
- End Page
- 66
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107475
- DOI
- 10.1016/j.jcrysgro.2012.03.058
- ISSN
- 0022-0248
- Abstract
- The performance of CdZnTe (CZT) detectors is limited not only by conventional carrier-trapping to point defects but also by trapping at macroscopic Te secondary-phase defects, such as Te inclusions and Te precipitates. The aim of this research is to remove these secondary-phase defects via thermomigration, and to obtain high resistivity of the material by creating Te antisites through annealing in a high Te overpressure. We annealed Te-rich CZT samples in the temperature range between 500 and 700 degrees C under Te overpressure with a temperature gradient of 50-60 degrees C/cm. We investigated the effects of annealing under these conditions by IR transmission microscopy, current-voltage measurements, photoluminescence, and white-beam X-ray diffraction topography (WBXDT) measurements comparing the findings with those from isothermally annealed CZT samples under Cd overpressure. We proved experimentally that Te inclusions present in Te-rich CZT melts contain void fractions. We attributed the complex defect of Te antisites with Cd vacancies in our annealing experiment as the deep level defect that pins the Fermi near the middle of the bandgap, rather than the Te antisite. (C) 2012 Elsevier B.V. All rights reserved.
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Collections - College of Health Sciences > School of Health and Environmental Science > 1. Journal Articles
- College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles
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