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Flexible resistive switching memory devices composed of solution-processed GeO2:S films
- Authors
- Chung, Isaac; Cho, Kyoungah; Yun, Junggwon; Kim, Sangsig
- Issue Date
- 9월-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- ReRAM; Doped GeO2; Unipolar; Flexible memories
- Citation
- MICROELECTRONIC ENGINEERING, v.97, pp.122 - 125
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 97
- Start Page
- 122
- End Page
- 125
- ISSN
- 0167-9317
- Abstract
- In this study, resistive random access memory (ReRAM) devices are fabricated using solution-processable sulfur-doped GeO2 (GeO2:S) on flexible substrates. The Al/GeO2:S/Au ReRAM devices exhibit the unipolar resistive switching behavior with an on/off ratio of more than 10(7) and the memory characteristics are retained after 10(4) s. The memory characteristics are unaffected by strains, even after the continuous substrate bending test for 10(3) cycles. (C) 2012 Elsevier B.V. All rights reserved.
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