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Effect of Sb doping on the opto-electronic properties of SnO2 nanowires
- Authors
- Kim, Yoon Chul; Yoon, Chang Hoon; Park, Jaehyun; Yoon, Jangyeol; Han, Noh Soo; Song, Jae Kyu; Park, Seung Min; Ha, Jeong Sook
- Issue Date
- 31-8월-2012
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Tin oxide nanowires; Antimony doping; Photoluminescence; Field effect mobility; Defect state; UV sensing
- Citation
- THIN SOLID FILMS, v.520, no.21, pp.6471 - 6475
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 520
- Number
- 21
- Start Page
- 6471
- End Page
- 6475
- ISSN
- 0040-6090
- Abstract
- Antimony (Sb) doping of SnO2 nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO2 NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO2 NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO2 NW FETs. (C) 2012 Elsevier B.V. All rights reserved.
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