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Fine-Grain Voltage Tuned Cache Architecture for Yield Management Under Process Variations

Authors
Kong, JoonhoPan, YanOzdemir, SerkanMohan, AnithaMemik, GokhanChung, Sung Woo
Issue Date
8월-2012
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Cache; process variation; selective wordline voltage boosting; supply voltage lowering; yield
Citation
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v.20, no.8, pp.1532 - 1536
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
Volume
20
Number
8
Start Page
1532
End Page
1536
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/107882
DOI
10.1109/TVLSI.2011.2159634
ISSN
1063-8210
Abstract
Process variations cause large fluctuations in performance and power consumption in the manufactured chips, which eventually results in yield losses. In this paper, to mitigate access time failures and excessive leakage in caches, we propose a novel selective wordline boosting mechanism combined with SRAM cell arrays voltage lowering. Based on our evaluation, the proposed approach recovers up to 83.1% of the yield losses.
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