Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance
- Authors
- Song, Jun-Hyuk; Oh, Joon-Ho; Shim, Jae-Phil; Min, Jung-Hong; Lee, Dong-Seon; Seong, Tae-Yeon
- Issue Date
- 8월-2012
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- InGaN; Solar cell; Cu-doped indium oxide; Ohmic contact
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.52, no.2, pp.299 - 305
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 52
- Number
- 2
- Start Page
- 299
- End Page
- 305
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107885
- DOI
- 10.1016/j.spmi.2012.05.002
- ISSN
- 0749-6036
- Abstract
- We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8% (at a peak wavelength of 376 nm) higher than those (25.2%) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm(2)) and fill factor (78.85%) as compared to those (0.65 mA/cm(2) and 74.08%) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12% and 1.30%, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed. (C) 2012 Elsevier Ltd. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.