Switching Characterization and Failure Analysis of In2Se3 Based Phase Change Memory (vol 44, 4759, 2005)

Lee, Heon; Kang, Dae-Hwan

doi:10.1143/JJAP.51.089201

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Switching Characterization and Failure Analysis of In2Se3 Based Phase Change Memory (vol 44, 4759, 2005)

Authors: Lee, Heon; Kang, Dae-Hwan

Issue Date: Aug-2012

Publisher: JAPAN SOC APPLIED PHYSICS

Citation: JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.8

Indexed: SCIE
SCOPUS

Journal Title: JAPANESE JOURNAL OF APPLIED PHYSICS

Volume: 51

Number: 8

URI: https://scholar.korea.ac.kr/handle/2021.sw.korea/107889

DOI: 10.1143/JJAP.51.089201

ISSN: 0021-4922

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Appears in Collections: College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles

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