Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes
- Authors
- Kim, Byung-Jae; Lee, Chongmin; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R., Jr.; Ren, Fan; Pearton, Stephen J.; Kim, Jihyun
- Issue Date
- 16-7월-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.101, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 101
- Number
- 3
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107922
- DOI
- 10.1063/1.4733981
- ISSN
- 0003-6951
- Abstract
- We report that the oxidation of graphene-based highly transparent conductive layers to AlGaN/GaN/AlGaN ultra-violet (UV) light-emitting diodes (LEDs) was suppressed by the use of SiNX passivation layers. Although graphene is considered to be an ideal candidate as the transparent conductive layer to UV-LEDs, oxidation of these layers at high operating temperatures has been an issue. The oxidation is initiated at the un-saturated carbon atoms at the edges of the graphene and reduces the UV light intensity and degrades the current-voltage (I-V) characteristics. The oxidation also can occur at defects, including vacancies. However, GaN-based UV-LEDs deposited with SiNX by plasma-enhanced chemical vapor deposition showed minimal degradation of light output intensity and I-V characteristics because the graphene-based UV transparent conductive layers were shielded from the oxygen molecules. This is a simple and effective approach for maintaining the advantages of graphene conducting layers as electrodes on UV-LEDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733981]
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.