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SiGe 140 GHz ring-oscillator-based injection-locked frequency divider

Authors
Seo, HyogiYun, JongwonRieh, Jae-Sung
Issue Date
5-Jul-2012
Publisher
INST ENGINEERING TECHNOLOGY-IET
Citation
ELECTRONICS LETTERS, v.48, no.14, pp.847 - U68
Indexed
SCIE
SCOPUS
Journal Title
ELECTRONICS LETTERS
Volume
48
Number
14
Start Page
847
End Page
U68
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/107947
DOI
10.1049/el.2012.1273
ISSN
0013-5194
Abstract
Presented is a D-band divide-by-3 injection-locked frequency divider (ILFD) based on a ring oscillator in a 0.18 mu m SiGe BiCMOS technology. The ILFD exhibits a locking range of 7.9 GHz (132.5-140.4 GHz) at an input signal power of -2 dBm, dissipating a total DC power of 71.2 mW. The ILFD core occupies an area of 0.0021 mm(2).
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