Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy
- Authors
- Park, Hyun Jong; Kim, Hong-Yeol; Bae, Jun Young; Shin, Seonghwan; Kim, Jihyun
- Issue Date
- 1-7월-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Doping; Hydride vapor phase epitaxy; GaN
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.350, no.1, pp.85 - 88
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 350
- Number
- 1
- Start Page
- 85
- End Page
- 88
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107954
- DOI
- 10.1016/j.jcrysgro.2011.12.029
- ISSN
- 0022-0248
- Abstract
- Freestanding GaN was grown on sapphire substrate in a horizontal HVPE system, followed by laser lift-off process. The thickness of the freestanding GaN samples was about 350 mu m. Si was used as an n-type dopant and the carrier concentrations were non-destructively measured by micro-Raman spectroscopy. The carrier concentrations of GaN samples were changed from 0.62 to 3.7 x 10(18)/cm(3) by varying the Si/Ga ratios from 0.01 to 0.04. Crystalline quality of the freestanding GaN was characterized by X-ray diffraction (XRD). The full-width at half-maximum (FWHM) values of the rocking curves of the (102) plane was changed from 96.9 to 317.5 arcsec depending on Si/Ga ratios. This work provides Si/Ga ratios to obtain various carrier concentrations of the freestanding GaN by HVPE, and proposes micro-Raman spectroscopy as a sensitive technique for carrier concentration measurement. (C) 2011 Elsevier B.V. All rights reserved.
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