Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors
- Authors
- Lo, Chien-Fong; Liu, Lu; Ren, Fan; Pearton, Stephen J.; Gila, Brent P.; Kim, Hong-Yeol; Kim, Jihyun; Laboutin, Oleg; Cao, Yu; Johnson, Jerry W.; Kravchenko, Ivan I.
- Issue Date
- 7월-2012
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 30
- Number
- 4
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107967
- DOI
- 10.1116/1.4729285
- ISSN
- 1071-1023
- Abstract
- The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 5 x 10(15) cm(-2) with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with similar to 10% degradation of the unity gain cut-off frequency (f(T)) and maximum oscillation frequency (f(max)) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66-1.24 cm(-1) over the range of proton energies investigated. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4729285]
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.