Increased Light Extraction From Vertical GaN Light-Emitting Diodes With Ordered, Cone-Shaped Deep-Pillar Nanostructures
DC Field | Value | Language |
---|---|---|
dc.contributor.author | An, Ho-Myoung | - |
dc.contributor.author | Sim, Jae In | - |
dc.contributor.author | Shin, Ki Seob | - |
dc.contributor.author | Sung, Yun Mo | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-06T18:01:09Z | - |
dc.date.available | 2021-09-06T18:01:09Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.issn | 0018-9197 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108007 | - |
dc.description.abstract | In this paper, improved light extraction using cone-shaped deep-pillar nanostructures is demonstrated on the Honeycomb-type vertical GaN light-emitting diodes (VLEDs). In order to produce ordered, cone-shaped deep-pillar patterns on the surface of an n-type GaN, double-layered polystyrene (PS) nanospheres of 500-nm size were coated onto the n-GaN layer by a simple spin-coating. Then, immediately after the O-2 plasma ashing for double-layered PS beads, the Ni metal was deposited and lifted off to form a hard mask for deep pillar etching. Then, the three VLEDs - the reference VLED with no patterns and the two VLEDs with ordered, cone-shaped pillar patterns of 1.0 and 1.5 mu m depth on the n-type GaN surface - were prepared for comparison. As a result, the output power for the proposed VLEDs with 1.0- and 1.5-mu m-deep cone-shaped patterns has been increased by 200% and 214%, respectively, at 350 mA as compared to the reference VLED. There was a slight sacrifice of operational voltage and leakage current. The improved optical properties are attributed to the multiple scattering of light from the sidewall of the cone-shaped patterns and the increased surface dimension. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | PHOTONIC CRYSTAL-STRUCTURES | - |
dc.subject | III-NITRIDE BLUE | - |
dc.subject | EFFICIENCY | - |
dc.subject | FABRICATION | - |
dc.subject | ENHANCEMENT | - |
dc.subject | PERFORMANCE | - |
dc.subject | IMPROVEMENT | - |
dc.subject | MORPHOLOGY | - |
dc.subject | SUBSTRATE | - |
dc.subject | LEDS | - |
dc.title | Increased Light Extraction From Vertical GaN Light-Emitting Diodes With Ordered, Cone-Shaped Deep-Pillar Nanostructures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Yun Mo | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1109/JQE.2012.2190587 | - |
dc.identifier.scopusid | 2-s2.0-84861147717 | - |
dc.identifier.wosid | 000304093200009 | - |
dc.identifier.bibliographicCitation | IEEE JOURNAL OF QUANTUM ELECTRONICS, v.48, no.7, pp.891 - 896 | - |
dc.relation.isPartOf | IEEE JOURNAL OF QUANTUM ELECTRONICS | - |
dc.citation.title | IEEE JOURNAL OF QUANTUM ELECTRONICS | - |
dc.citation.volume | 48 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 891 | - |
dc.citation.endPage | 896 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Quantum Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PHOTONIC CRYSTAL-STRUCTURES | - |
dc.subject.keywordPlus | III-NITRIDE BLUE | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordAuthor | Cone-shaped | - |
dc.subject.keywordAuthor | double layer coating | - |
dc.subject.keywordAuthor | gallium nitride | - |
dc.subject.keywordAuthor | honeycomb-type | - |
dc.subject.keywordAuthor | nanosphere lithography | - |
dc.subject.keywordAuthor | vertical light emitting diode | - |
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