Electrochemical Fabrication of (TMTSF)(2)X (X = PF6, BF4, CIO4) Nanowires
- Authors
- Jung, Youn Jung; Kim, Yonha; Kim, Gyu Tae; Kang, Woun; Noh, Dong-Youn
- Issue Date
- 7월-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- TMTSF; Nanowire; AAO; Galvanostatic Deposition; Organic Superconductor
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5397 - 5401
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 12
- Number
- 7
- Start Page
- 5397
- End Page
- 5401
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108035
- DOI
- 10.1166/jnn.2012.6266
- ISSN
- 1533-4880
- Abstract
- TMTSF-based (TMTSF = tetramethyltetraselenafulvalene = C10H12Se4) charge-transfer salt nanowires were fabricated using the galvanostatic deposition technique that was assisted by an anodic aluminum oxide (AAO) template. By applying a low current density of 1-2 mu A/cm(2) for more than one month, nanowire arrays with diameters of similar to 150 nm and lengths of similar to 6 mu m were obtained. The length of nanowires can be controlled by the duration of the constant current application. Energy-dispersive X-ray spectroscopic (EDX) analysis confirmed that selenium is one of the main components of the nanowires. The micro-Raman (v(3)C=C) and FT-IR spectra (v(3)PF(6)(-), v(3)BF(4)(-), v(3)CIO(4)(-)) indicated that the nanowire arrays had the (TMTSF)(2)X (X = PF6, BF4, CIO4) phase. The TEM images and the selected area electron diffraction (SAED) patterns indicate that the nanowires were not single crystals, but the current voltage characteristic that was measured with the four-terminal method showed the conductivity of the (TMTSF)(2)PF6 single crystals (sigma(RT) = 1.6 S/cm) at room temperature.
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