Selective chemical etch of gallium nitride by phosphoric acid
- Authors
- Lee, Chongmin; Hite, Jennifer K.; Mastro, Michael A.; Freitas, Jaime A., Jr.; Eddy, Charles R., Jr.; Kim, Hong-Yeol; Kim, Jihyun
- Issue Date
- 7월-2012
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.30, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 30
- Number
- 4
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108066
- DOI
- 10.1116/1.4719528
- ISSN
- 0734-2101
- Abstract
- The authors report on the direct comparison of the chemical etch characteristics on both Ga- and N-face gallium nitride (GaN) by phosphoric acid. First, Ga-face GaN was grown next to N-face GaN by a polarity inversion method in a metal-organic chemical vapor deposition reactor. Micro-photoluminescence, atomic force microscopy, scanning electron microscopy, and micro-Raman spectroscopy were used to analyze the etch characteristics of Ga- and N-face GaN before and after a H3PO4-based chemical etch. Ga-face was chemically stable in a phosphoric acid solution. However, the chemical etch continued proceeding on the N-face GaN due to the weak repulsive force to OH- ions. Dodecagonal nano-pyramids which dramatically enhanced the photoluminescence intensity were observed on N-face GaN after a H3PO4-based chemical etch. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4719528]
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