Resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method
- Authors
- Seong, Tae-Geun; Choi, Kyu Bum; Seo, In-Tae; Oh, Joon-Ho; Moon, Ji Won; Hong, Kwon; Nahm, Sahn
- Issue Date
- 21-5월-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.100, no.21
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 100
- Number
- 21
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108406
- DOI
- 10.1063/1.4722797
- ISSN
- 0003-6951
- Abstract
- Amorphous Pr0.7Ca0.3MnO3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77% in the visible range with a maximum transparency of 84% at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10(5) s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4722797]
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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