Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography
- Authors
- Byeon, Kyeong-Jae; Cho, Joong-Yeon; Kim, Jinseung; Park, Hyoungwon; Lee, Heon
- Issue Date
- 7-5월-2012
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS EXPRESS, v.20, no.10, pp.11423 - 11432
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICS EXPRESS
- Volume
- 20
- Number
- 10
- Start Page
- 11423
- End Page
- 11432
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108440
- DOI
- 10.1364/OE.20.011423
- ISSN
- 1094-4087
- Abstract
- SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven. (C) 2012 Optical Society of America
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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