Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers
- Authors
- Kim, D. H.; Kim, D. K.; Cho, J. U.; Park, S. Y.; Isogami, S.; Tsunoda, M.; Takahashi, M.; Fullerton, E. E.; Kim, Y. K.
- Issue Date
- 1-5월-2012
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.111, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 111
- Number
- 9
- ISSN
- 0021-8979
- Abstract
- We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Omega mu m(2), respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm(2). This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709738]
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.