Charge trap flash memory using ferroelectric materials as a blocking layer
DC Field | Value | Language |
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dc.contributor.author | Seo, Yujeong | - |
dc.contributor.author | An, Ho-Myoung | - |
dc.contributor.author | Song, Min Yeong | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-06T21:14:28Z | - |
dc.date.available | 2021-09-06T21:14:28Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-04-23 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108708 | - |
dc.description.abstract | In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr0.7Bi2.3Nb2O9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 mu s), and higher endurance (10(5) P/E cycles) with comparable retention properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4705411] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | RETENTION | - |
dc.title | Charge trap flash memory using ferroelectric materials as a blocking layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1063/1.4705411 | - |
dc.identifier.scopusid | 2-s2.0-84860323203 | - |
dc.identifier.wosid | 000303340300091 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.17 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.citation.number | 17 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | RETENTION | - |
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