Charge trap flash memory using ferroelectric materials as a blocking layer
- Authors
- Seo, Yujeong; An, Ho-Myoung; Song, Min Yeong; Kim, Tae Geun
- Issue Date
- 23-4월-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.100, no.17
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 100
- Number
- 17
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108708
- DOI
- 10.1063/1.4705411
- ISSN
- 0003-6951
- Abstract
- In this paper, we propose a charge-trap flash memory device using a ferroelectric material, Sr0.7Bi2.3Nb2O9 (SBN), with spontaneous polarization as a blocking layer. This device consists of metal/SBN/nitride/oxide/silicon and has an advantage in the carrier injection into the nitride from the silicon due to polarization charges formed in the ferroelectric material. Compared to conventional metal/oxide/nitride/oxide/silicon memory devices, the proposed devices showed a larger memory window (7 V), faster program/erase (P/E) speeds (100/500 mu s), and higher endurance (10(5) P/E cycles) with comparable retention properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4705411]
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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