Improved Light Output Power in GaN-based Vertical Light-emitting Diodes with p-AlInGaN/GaN Superlattices
- Authors
- Kim, Su Jin; Son, Sung Hun; Kim, Tae Geun
- Issue Date
- 4월-2012
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Vertical; light-emitting diodes (LEDs); Electron blocking layer (EBL); Superlattices (SLs); AlInGaN
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.8, pp.1258 - 1262
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 60
- Number
- 8
- Start Page
- 1258
- End Page
- 1262
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108818
- DOI
- 10.3938/jkps.60.1258
- ISSN
- 0374-4884
- Abstract
- In this paper, we report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in the output power and the external quantum efficiency (EQE) as compared to VLEDs using p-AlGaInN EBL and pAlGaN EBL. The forward voltages at 350 mA were calculated to be 4.1, 4.3, and 4.4 V for VLEDs with p-AlInGaN/GaN SLs, p-AlInGaN, and p-AlGaN EBLs, respectively. When p-AlInGaN/GaN SLs were inserted as the EBLs, the light-output power and the EQE were also improved by 16.8% and 17.3% at 350 mA, respectively, as compared to those with p-AlGaN EBLs.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.