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Epitaxial Structure Optimization of Nonpolar a-plane GaN Light-emitting Diodes
- Authors
- Kim, Dong Ho; Kim, Su Jin; Son, Sung Hun; Kim, Tae Geun
- Issue Date
- 4월-2012
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Nonpolar; Gallium-nitride (GaN); Epitaxial structure; Multiple quantum-wells (MQW); Light-emitting diodes (LEDs)
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.8, pp.1215 - 1218
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 60
- Number
- 8
- Start Page
- 1215
- End Page
- 1218
- ISSN
- 0374-4884
- Abstract
- In this research, the number of quantum well (QW) were optimized to improve the device performance of nonpolar a-plane (11-20) GaN light-emitting diodes (LEDs). Based on a theoretical consideration, we applied four periods of 3.5-nm-thick In0.23Ga0.77N quantum wells and 6-nm-thick GaN quantum barriers in order to reduce the carrier overflow and thereby to increase the radiative recombination rates. As a result, we found that the radiative recombination rate was increased by 29% at 20 mA while the forward voltage and the light output-power were improved by 7.4% and 12.3%, respectively, compared with a single QW nonpolar a-plane GaN LED.
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