Selective-Area High-Quality Germanium Growth for Monolithic Integrated Optoelectronics
DC Field | Value | Language |
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dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.contributor.author | Okyay, Ali K. | - |
dc.contributor.author | Saraswat, Krishna C. | - |
dc.date.accessioned | 2021-09-06T21:55:40Z | - |
dc.date.available | 2021-09-06T21:55:40Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-04 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108888 | - |
dc.description.abstract | Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 x 10(7) cm(-2) by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | THREADING-DISLOCATION DENSITIES | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | TEMPERATURE SI BUFFERS | - |
dc.subject | METAL PHOTODETECTORS | - |
dc.subject | LAYERS | - |
dc.subject | GE | - |
dc.title | Selective-Area High-Quality Germanium Growth for Monolithic Integrated Optoelectronics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/LED.2011.2181814 | - |
dc.identifier.scopusid | 2-s2.0-84862820305 | - |
dc.identifier.wosid | 000302232900038 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.33, no.4, pp.579 - 581 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 33 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 579 | - |
dc.citation.endPage | 581 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | THREADING-DISLOCATION DENSITIES | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | TEMPERATURE SI BUFFERS | - |
dc.subject.keywordPlus | METAL PHOTODETECTORS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordAuthor | Area dependent | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | monolithic | - |
dc.subject.keywordAuthor | optoelectronics | - |
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