Selective-Area High-Quality Germanium Growth for Monolithic Integrated Optoelectronics
- Authors
- Yu, Hyun-Yong; Park, Jin-Hong; Okyay, Ali K.; Saraswat, Krishna C.
- Issue Date
- 4월-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Area dependent; germanium; monolithic; optoelectronics
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.33, no.4, pp.579 - 581
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 33
- Number
- 4
- Start Page
- 579
- End Page
- 581
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108888
- DOI
- 10.1109/LED.2011.2181814
- ISSN
- 0741-3106
- Abstract
- Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 x 10(7) cm(-2) by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.
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