Sub 50 nm Nano-Patterns with Carbon Based Spin-On Organic Hardmask
- Authors
- Shin, Ju-Hyeon; Yang, Ki-Yeon; Han, Kang-Soo; Kim, Hyeong-Seok; Lee, Heon
- Issue Date
- 4월-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Carbon Based Spin-On Organic Hardmask (C-SOH); Poly(methyl methacrylate) (PMMA); Etch Resistance; Nanoimprint Lithography; Polyurethaneacrylate (PUA)
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.4, pp.3364 - 3368
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 12
- Number
- 4
- Start Page
- 3364
- End Page
- 3368
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108918
- DOI
- 10.1166/jnn.2012.5646
- ISSN
- 1533-4880
- Abstract
- Carbon based spin-on organic hardmask (C-SOH) was used as an imprint resin to fabricate sub 50 nm sized patterns. Imprinting of C-SOH was done with a polyurethaneacrylate (PUA) stamp. Patternability and etch resistance of the C-SOH resin was compared to poly(methyl methacrylate) (PMMA). C-SOH can be patterned at the nanosize using imprint lithography and exhibits superior etch resistance, especially for F-based plasmas. Due to the poor etch resistance of imprint resin such as PMMA, it is seldom used as an etch mask to form nano-structures by etching the Si3N4 layer. However, such a nano-structure was able to be formed by etching the Si3N4 layer using C-SOH as an etch mask.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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