Floating Body Effect in Partially Depleted Silicon Nanowire Transistors and Potential Capacitor-Less One-Transistor DRAM Applications
DC Field | Value | Language |
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dc.contributor.author | Lee, Myeongwon | - |
dc.contributor.author | Moon, Taeho | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-06T22:34:59Z | - |
dc.date.available | 2021-09-06T22:34:59Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108997 | - |
dc.description.abstract | We present a capacitor-less 1T-DRAM cell on SiO2/Si substrates using a silicon nanowire (SiNW) as the channel material. The SiNWs are fabricated by a top-down route that is fully compatible with the current Si-based CMOS technology. Based on the observation of the floating body effect of a partially depleted (PD) silicon nanowire transistor (SNWT), its 1T-DRAM functionality and reliability characteristics are investigated. By virtue of the top-down route providing a printable form of the inverted triangular SiNWs, the PD SNWT 1T-DRAM cell can be applied on insulating plastic substrates for potential applications of flexible electronics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Floating Body Effect in Partially Depleted Silicon Nanowire Transistors and Potential Capacitor-Less One-Transistor DRAM Applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1109/TNANO.2011.2175942 | - |
dc.identifier.scopusid | 2-s2.0-84863346066 | - |
dc.identifier.wosid | 000301420900020 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.11, no.2, pp.355 - 359 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 355 | - |
dc.citation.endPage | 359 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Capacitor-less | - |
dc.subject.keywordAuthor | floating body effect | - |
dc.subject.keywordAuthor | partially depleted (PD) | - |
dc.subject.keywordAuthor | silicon nanowire transistor (SNWT) | - |
dc.subject.keywordAuthor | 1T-DRAM | - |
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