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Floating Body Effect in Partially Depleted Silicon Nanowire Transistors and Potential Capacitor-Less One-Transistor DRAM Applications

Authors
Lee, MyeongwonMoon, TaehoKim, Sangsig
Issue Date
3월-2012
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Capacitor-less; floating body effect; partially depleted (PD); silicon nanowire transistor (SNWT); 1T-DRAM
Citation
IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.11, no.2, pp.355 - 359
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume
11
Number
2
Start Page
355
End Page
359
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/108997
DOI
10.1109/TNANO.2011.2175942
ISSN
1536-125X
Abstract
We present a capacitor-less 1T-DRAM cell on SiO2/Si substrates using a silicon nanowire (SiNW) as the channel material. The SiNWs are fabricated by a top-down route that is fully compatible with the current Si-based CMOS technology. Based on the observation of the floating body effect of a partially depleted (PD) silicon nanowire transistor (SNWT), its 1T-DRAM functionality and reliability characteristics are investigated. By virtue of the top-down route providing a printable form of the inverted triangular SiNWs, the PD SNWT 1T-DRAM cell can be applied on insulating plastic substrates for potential applications of flexible electronics.
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