Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process
- Authors
- Choi, Jun Young; Kim, Sang Sig; Lee, Sang Yeol
- Issue Date
- 9-1월-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.100, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 100
- Number
- 2
- ISSN
- 0003-6951
- Abstract
- The feasibility of controlling the threshold voltage (V-th) and field effect mobility (mu(FE)) has been studied by adjusting hafnium ratio. Hafnium zinc tin oxide (HZTO) thin films were fabricated with various hafnium ratios. V-th shifted toward positive direction, and the mu(FE) was decreased due to the decrease of carrier concentration, because hafnium acts as carrier suppressor. The subthreshold swing exhibits good properties from 1.01 to 0.44. The decrease of carrier concentration in HZTO is closely related with the decrease of the number of oxygen by hafnium ion. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3669700]
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.