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A study on the aluminum fire-through to a-SiNx:H thin film for crystalline solar cells

Authors
Song, JooyongPark, SungeunKwon, SoonwooKim, SungtakKim, HyunhoTark, Sung JuYoon, SewangKim, Donghwan
Issue Date
1월-2012
Publisher
ELSEVIER SCIENCE BV
Keywords
Aluminum; Silicon nitride; Local contact; Rear passivation; Back surface field; Solar cell
Citation
CURRENT APPLIED PHYSICS, v.12, no.1, pp.313 - 318
Indexed
SCIE
SCOPUS
KCI
Journal Title
CURRENT APPLIED PHYSICS
Volume
12
Number
1
Start Page
313
End Page
318
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/109129
DOI
10.1016/j.cap.2011.06.028
ISSN
1567-1739
Abstract
The relationship between aluminum fire-through and the properties of a-SiNx:H thin films was investigated to aid their use as dielectric layers in rear side and front passivation layers in crystalline solar cells. Aluminum fire-through was shown to depend on the refractive index and the deposition rate of the films. Refractive index, density and deposition rate increased with increasing SiH4/NH3 ratio, while the etching rate decreased. Aluminum fire-through occurred in a sample of refractive index 2.0 during fast deposition but not when the deposition rate was slow. Aluminum fire-through occurred during extended firing, despite it not occurring during normal firing by RTP. The results of this work demonstrate that refractive index was the major determinant of aluminum fire-through, and that the aluminum and the a-SiNx:H thin film reacted immediately at the beginning of firing at a rate determined by the deposition rate. (C) 2011 Elsevier B. V. All rights reserved.
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공과대학 (신소재공학부)
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