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Effects of controllable process factors on Al rear surface bumps in Si solar cells

Authors
Park, SungeunBae, SoohyunKim, HyunhoKim, SeongtakDo Kim, YoungPark, HyominKim, SoominTark, Sung JuSon, Chang-SikKim, Donghwan
Issue Date
1월-2012
Publisher
ELSEVIER SCIENCE BV
Keywords
Aluminum back surface field; Al bump; Solar cells; Al-Si eutectic alloy; Al-Si contact
Citation
CURRENT APPLIED PHYSICS, v.12, no.1, pp.17 - 22
Indexed
SCIE
SCOPUS
KCI
Journal Title
CURRENT APPLIED PHYSICS
Volume
12
Number
1
Start Page
17
End Page
22
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/109130
DOI
10.1016/j.cap.2011.04.021
ISSN
1567-1739
Abstract
High efficiency solar cells require good back surface field passivation and high back reflectance in the rear Al region. In module processes, wafer-based solar cell can break through stress during soldering uneven rear aluminum surfaces - a serious problem that affects throughput. This work examined rear surfaces with respect to controllable process factors such as ramping and cooling rates during rapid thermal processing, and the fineness of aluminum powder used in the screen-printed paste. A faster ramp up rate resulted in a uniform temperature gradient between the aluminum and silicon surfaces. As a results, the bumps on the aluminum surface were small and of high density. Fine aluminum metal powder in the paste for screen-printing contact points resulted in large distribution, high density bumps. Bumps formed during cooling in metallization, their sizes and densities were dependent the on uniformity of the aluminum and silicon liquid wetting of the silicon surface. (C) 2011 Elsevier B. V. All rights reserved.
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공과대학 (신소재공학부)
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