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Effect of plasma source power on the nanocrystallization of silicon thin films by reactive particle beam assisted chemical vapor deposition

Authors
Choi, Sun GyuPark, Hyung-HoJang, Jin-NyoungHong, MunPyoKwon, Kwang-Ho
Issue Date
1월-2012
Publisher
ELSEVIER SCI LTD
Keywords
Films; Spectroscopy; Electrical properties; Functional applications
Citation
CERAMICS INTERNATIONAL, v.38, pp.S641 - S644
Indexed
SCIE
SCOPUS
Journal Title
CERAMICS INTERNATIONAL
Volume
38
Start Page
S641
End Page
S644
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/109141
DOI
10.1016/j.ceramint.2011.05.116
ISSN
0272-8842
Abstract
The effect of radio frequency antenna power on the physical and chemical properties of nanocrystalline silicon deposited by reactive particle beam assisted chemical vapor deposition were systematically studied using various powers. Nanocrystalline Si embedded in an amorphous matrix was analyzed by X-ray diffraction and Raman spectroscopy. Films that were deposited under high power formed large grains due to high accelerated particle energy and high density in plasma. Using X-ray photoelectron spectroscopy, the chemical state of nanocrystalline silicon films was revealed to have Si Si bonds. Further, an increase in antenna powers induced a roughened surface morphology, as well as changes in the dark conductivity and optical bandgap in Si films. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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Graduate School > Department of Applied Physics > 1. Journal Articles
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