Low-temperature fabrication (< 150 degrees C) of amorphous IGZO TFTs via high density CVD and superimposed rf/dc magnetron sputtering
DC Field | Value | Language |
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dc.contributor.author | Kim, DooHyun | - |
dc.contributor.author | Lee, DongHyeok | - |
dc.contributor.author | Yoon, SooBok | - |
dc.contributor.author | Jang, JinNyoung | - |
dc.contributor.author | Hong, MunPyo | - |
dc.date.accessioned | 2021-09-06T23:44:23Z | - |
dc.date.available | 2021-09-06T23:44:23Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/109277 | - |
dc.description.abstract | This paper presents a low temperature fabrication of amorphous IGZO TFTs (a-IGZO TFTs) via high density CVD and superimposed rf/dc magnetron sputtering below 150 degrees C Low temperature processed SiOx films were been prepared in high density plasma chemical vapor deposition with inductively-coupled plasma (ICP) source and their electrical properties of these films have been investigated as a function of an ICP power and an O-2 flow rate. Also, we found that a-IGZO semiconductor could be affected by a dc self-bias of a target surface using a superimposed rf/dc magnetron sputtering. Increasing a dc self-bias, higher post-annealing temperature is needed to achieve their electrical characteristics of a-IGZO TFTs. For a low-temperature and high performance a-IGZO TFTs, therefore, it is necessarily considered that a-IGZO semiconductors could be damaged due to accelerated negative oxygen ions during conventional magnetron sputtering. (c) 2012 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | OXIDE | - |
dc.subject | PLASMAS | - |
dc.subject | ENERGY | - |
dc.title | Low-temperature fabrication (< 150 degrees C) of amorphous IGZO TFTs via high density CVD and superimposed rf/dc magnetron sputtering | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, MunPyo | - |
dc.identifier.doi | 10.1016/j.cap.2012.05.029 | - |
dc.identifier.wosid | 000316215400011 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.12, pp.S48 - S51 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 12 | - |
dc.citation.startPage | S48 | - |
dc.citation.endPage | S51 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | PLASMAS | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordAuthor | Silicon dioxide | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | Low temperature a-IGZO TFTs | - |
dc.subject.keywordAuthor | Superimposed rf/dc magnetron sputtering | - |
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