Low-temperature fabrication (< 150 degrees C) of amorphous IGZO TFTs via high density CVD and superimposed rf/dc magnetron sputtering
- Authors
- Kim, DooHyun; Lee, DongHyeok; Yoon, SooBok; Jang, JinNyoung; Hong, MunPyo
- Issue Date
- 2012
- Publisher
- ELSEVIER
- Keywords
- Silicon dioxide; IGZO; Low temperature a-IGZO TFTs; Superimposed rf/dc magnetron sputtering
- Citation
- CURRENT APPLIED PHYSICS, v.12, pp.S48 - S51
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 12
- Start Page
- S48
- End Page
- S51
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/109277
- DOI
- 10.1016/j.cap.2012.05.029
- ISSN
- 1567-1739
- Abstract
- This paper presents a low temperature fabrication of amorphous IGZO TFTs (a-IGZO TFTs) via high density CVD and superimposed rf/dc magnetron sputtering below 150 degrees C Low temperature processed SiOx films were been prepared in high density plasma chemical vapor deposition with inductively-coupled plasma (ICP) source and their electrical properties of these films have been investigated as a function of an ICP power and an O-2 flow rate. Also, we found that a-IGZO semiconductor could be affected by a dc self-bias of a target surface using a superimposed rf/dc magnetron sputtering. Increasing a dc self-bias, higher post-annealing temperature is needed to achieve their electrical characteristics of a-IGZO TFTs. For a low-temperature and high performance a-IGZO TFTs, therefore, it is necessarily considered that a-IGZO semiconductors could be damaged due to accelerated negative oxygen ions during conventional magnetron sputtering. (c) 2012 Elsevier B.V. All rights reserved.
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