Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of redox proteins on the behavior of non-volatile memory
- Authors
- Lee, Ji Hyun; Yew, Seung Chul; Cho, Jinhan; Kim, Youn Sang
- Issue Date
- 2012
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- CHEMICAL COMMUNICATIONS, v.48, no.98, pp.12008 - 12010
- Indexed
- SCIE
SCOPUS
- Journal Title
- CHEMICAL COMMUNICATIONS
- Volume
- 48
- Number
- 98
- Start Page
- 12008
- End Page
- 12010
- ISSN
- 1359-7345
- Abstract
- We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (similar to 11 V) and relatively good endurance properties (similar to over 100 cycles).
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.