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Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes
- Issue Date
- 1-12월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Contact; laser annealing; light-emitting diodes (LEDs); semiconductor-metal interfaces
- Citation
- IEEE PHOTONICS TECHNOLOGY LETTERS, v.23, no.23, pp.1784 - 1786
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE PHOTONICS TECHNOLOGY LETTERS
- Volume
- 23
- Number
- 23
- Start Page
- 1784
- End Page
- 1786
- ISSN
- 1041-1135
- Abstract
- We report on the formation of highly reliable Ti/Al-based Ohmic contacts to N-polar n-GaN for vertical light-emitting diodes via laser-annealing. All as-deposited samples are Ohmic with specific contact resistances of 1.1 - 4.3 x 10(-4) Omega cm(2). After annealing at 250 degrees C, unlike the untreated sample, the laser-annealed samples remain Ohmic with specific contact resistances of 2.6-3.9 x 10(-4) Omega cm(2). The laser-annealed samples remain electrically stable up to 60 min at 300 degrees C. Laser-annealing causes the formation of interfacial TiN/beta-AlN phases with rock salt structure. Based on X-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic mechanisms are described.
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