An alternate switching/non-switching behavior of a nanostructured magnetic thin film under sub-Stoner-Wohlfarth switching fields
- Authors
- Lee, Jong Min; Lim, S. H.
- Issue Date
- 1-11월-2011
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.110, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 110
- Number
- 9
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111172
- DOI
- 10.1063/1.3658266
- ISSN
- 0021-8979
- Abstract
- Dynamic magnetization switching can occur under sub-Stoner-Wohlfarth switching fields, and the switching behavior is well described by the switching phase diagram, showing the regions of non-switching, coherent, and incoherent switching. However, in the incoherent switching region, an alternate switching/non-switching behavior is observed under a strong bias field in the transverse direction, invalidating the usual switching phase diagram. This abnormal switching behavior is explained by a damped oscillation motion of the magnetization, which is restricted by the energy well at a given condition. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658266]
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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