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An alternate switching/non-switching behavior of a nanostructured magnetic thin film under sub-Stoner-Wohlfarth switching fields

Authors
Lee, Jong MinLim, S. H.
Issue Date
1-11월-2011
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.110, no.9
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
110
Number
9
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/111172
DOI
10.1063/1.3658266
ISSN
0021-8979
Abstract
Dynamic magnetization switching can occur under sub-Stoner-Wohlfarth switching fields, and the switching behavior is well described by the switching phase diagram, showing the regions of non-switching, coherent, and incoherent switching. However, in the incoherent switching region, an alternate switching/non-switching behavior is observed under a strong bias field in the transverse direction, invalidating the usual switching phase diagram. This abnormal switching behavior is explained by a damped oscillation motion of the magnetization, which is restricted by the energy well at a given condition. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658266]
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공과대학 (신소재공학부)
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